The 6MBI150VX-120-50 is an IGBT module manufactured by Fuji Electric, featuring a 6-pack configuration with 6 IGBTs (Insulated Gate Bipolar Transistors) and 6 freewheeling diodes. The module supports a maximum collector-emitter voltage (V_CES) of 1200V and a rated collector current (I_C) of 150A. It is known for its efficient switching performance, low conduction loss, and built-in overcurrent/overtemperature protection. This makes it widely applicable in high-power scenarios such as industrial motor drives, inverters, uninterruptible power supplies (UPS), and servo control systems. Additionally, the module features a compact M648 package, supports an operational junction temperature of up to 150°C, and has a storage temperature range of -40°C to 125°C, offering high reliability for demanding industrial environments.
From the circuit diagram of the 6MBI150VX-120-50, we can see that the module consists of 6 IGBTs and 6 freewheeling diodes. Each IGBT is paired with a freewheeling diode to provide current path continuity. The P (positive DC terminal) serves as the positive bus input, supplying DC power to the IGBTs for the three-phase inverter circuit. The N (negative DC terminal) is the negative bus input, working together with P to power the inverter module. The U, V, and W (three-phase output terminals) are the output terminals of the inverter, connected to the motor’s three-phase windings. Through the switching actions of the IGBTs, DC power is converted into three-phase AC power.
ICES: Maximum collector-emitter leakage current is 1.0 mA, ensuring low power loss during the off state.
IGES: Maximum gate-emitter leakage current is 200 nA, demonstrating excellent insulation performance.
VGE(th): Gate-emitter threshold voltage ranges from 6.0 to 7.0V, suitable for moderate driving voltage.
VCE(sat): Minimum collector-emitter saturation voltage is 2.2V (chip level), with a slight increase as temperature rises.
Rg: Internal gate resistance is typically 1.1 Ω, facilitating faster switching.
Cies: Input capacitance is 3300 nF, requiring a robust gate driver circuit for proper operation.
ton / toff: Turn-on time is 0.37 μs, and turn-off time is 0.67 μs, providing moderate switching speeds.
VF: Minimum forward voltage of the internal diode is 2.4V (chip level), ensuring low conduction loss.
trr: Reverse recovery time is 0.15 μs, minimizing energy loss during switching.
Thermistor: Resistance and B value are used for temperature monitoring and protection, ensuring safe operation.
High Power Handling Capability: Rated for 150A current and 1200V voltage, suitable for high-power applications.
Low Conduction Loss: A low collector-emitter saturation voltage (V_CE(sat)) reduces power loss and increases system efficiency.
High-Speed Switching: Designed for high-speed switching operations, making it ideal for high-frequency applications.
Integrated Protection Features: Built-in overtemperature and overcurrent protection improves system reliability.
High Cooling Requirements: The high power density generates significant heat, requiring effective thermal management.
Complex Gate Drive Circuitry: Requires precise gate drive and protection circuitry, increasing design complexity.
Higher Cost: Compared to lower-power devices, the module has a higher cost, which may impact overall system expenses.
Inverter for motor drives: This is used to control the speed and torque of AC motors, achieving efficient power conversion.
Numerical Control (NC) and Servo Systems: Provides precise motion control and high responsiveness in CNC machines and robotics.
Uninterruptible Power Supply (UPS): Ensures stable power delivery to critical equipment during power outages.
Industrial Equipment: Serves as a core power conversion component in high-power, high-efficiency equipment like welding machines.
Parameter |
Details |
Configuration |
6-Pack |
Series |
V Series (6th Generation) |
VCES(V) |
1200 |
IC(A) |
150 |
Tvjmax (°C) |
175 |
Tvjopmax (°C) |
150 |
Tc(°C) |
125 |
Tstg(°C) |
-40 to 125 |
Package |
M648 |
Width (mm) |
62 |
Length (mm) |
122 |
Weight (g) |
300 |
2025-01-09
2025-01-09
The maximum collector current of 6MBI150VX-120-50 is 150A, and the maximum collector-emitter voltage is 1200V.
This module is widely used in industrial equipment such as inverters, numerical control (NC), servo systems, and UPS (uninterruptible power supply).
The operating junction temperature of 6MBI150VX-120-50 can reach up to 150°C, and the storage temperature range is -40°C to 125°C.
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